A2G35S200-01SR3

RF FETs, MOSFETs Overview

The A2G35S200-01SR3 is a 40 W average power RF GaN transistor designed for cellular base station applications. It operates within the 3400 to 3600 MHz frequency range and utilizes a 48 Vdc drain supply. The device features high terminal impedances for optimal broadband performance and is optimized for Doherty amplifier configurations. It incorporates digital predistortion error correction capabilities. The component is housed in an NI-400S-2S package with dual N-channel configuration.

RF FETs, MOSFETs Feature Summary

• High terminal impedances facilitate optimal broadband performance across the designated frequency band.
• Designed specifically for integration into digital predistortion error correction systems.
• Optimized architecture supports efficient operation within Doherty amplifier topologies.

RF FETs, MOSFETs Applications

• Cellular base station amplification
• Doherty power amplifier designs
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm packaging details. Confirm RoHS compliance status through official datasheets prior to implementation. Ensure thermal management solutions align with the specified junction temperature limits and thermal resistance values provided in the technical data.

RF FETs, MOSFETs Selection Notes

Select this component for wide instantaneous bandwidth requirements between 3400 and 3600 MHz. Evaluate compatibility with 48 Vdc supply rails and required quiescent current levels. Consider the need for robust thermal dissipation given the high power density and operating junction temperature specifications inherent to GaN technology.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast series of RF power GaN transistors from NXP Semiconductors (formerly Freescale). These devices are engineered for high-efficiency radio frequency power amplification in telecommunications infrastructure, emphasizing linearity and broadband capability.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent Airfast series components. Verify pinout compatibility and electrical parameter alignment before considering alternative part numbers.

RF FETs, MOSFETs FAQ

What is the guaranteed operating frequency range?

Performance is guaranteed for applications operating in the 3400 to 3600 MHz band.

How should the biasing sequence be managed during turn-on?

Set VGS to pinch-off voltage, apply nominal VDS supply, then increase VGS to attain IDS current before applying RF input power.

What is the maximum forward gate current rating?

The maximum forward gate current is 25 mA at a case temperature of 25°C.