A2T18H100-25SR3

RF FETs, MOSFETs Overview

The A2T18H100-25SR3 is an Airfast RF Power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 1805 to 1880 MHz frequency range and delivers a continuous average output power of 28 W at a drain voltage of 28 V. The device features a dual-channel N-Channel architecture in an SMD/SMT NI-780S-4L2L-6 package, with a maximum operating temperature of +150 °C.

RF FETs, MOSFETs Feature Summary

• Airfast RF Power LDMOS technology for high efficiency
• Dual-channel configuration for balanced performance
• Designed for robust operation in cellular base stations

RF FETs, MOSFETs Applications

• Cellular base station amplification
• Broadband RF power applications

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as availability may vary. Confirm specific ordering suffixes against official datasheets to ensure correct packaging and specifications. Check current lifecycle status before procurement planning.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring 28 W output power in the 1.8 GHz band. Ensure thermal management supports the specified operating temperature range. Verify compatibility with 28 V supply systems and required gain specifications.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast family of RF power transistors designed for demanding wireless infrastructure environments. It complements other variants in the series offering different power levels or frequency bands for scalable base station designs.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts. Verify pinout and electrical parameters match before replacing.