A2T18H160-24SR3

RF FETs, MOSFETs Overview

The A2T18H160-24SR3 is an Airfast RF Power LDMOS Transistor manufactured by NXP Semiconductors. It operates within the frequency range of 1805 MHz to 1880 MHz, delivering a continuous average output power of 28 W at a drain voltage of 28 V. The device features a gain of 17.9 dB and utilizes Silicon technology with an N-Channel configuration. Key electrical limits include a drain-source breakdown voltage of 65 V and a gate-source voltage range of -6 V to +10 V. It is housed in the NI-780S-4L2L-6 surface-mount package and supports operation temperatures from -40°C to +150°C.

RF FETs, MOSFETs Feature Summary

• High-efficiency RF power amplification using LDMOS technology for robust performance in demanding environments.
• Optimized for wideband cellular base station applications requiring high linearity and thermal stability.
• Integrated dual-channel design within a compact surface-mount package to facilitate PCB layout.

RF FETs, MOSFETs Applications

• Wideband cellular base station power amplifiers
• RF power modules for telecommunications infrastructure
• Broadband amplifier designs operating in the 1.8 GHz band

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels due to discontinued status. Confirm package integrity and pin alignment against the NI-780S-4L2L-6 specification before integration. Review datasheet revisions for any updates to absolute maximum ratings or thermal characteristics. Ensure supply chain documentation matches the specific suffix SR3 for reel packaging requirements.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring 28 W output power in the 1805-1880 MHz band. Compare gain and efficiency metrics against alternative LDMOS devices if higher frequencies are needed. Consider thermal management solutions compatible with the specified operating temperature range. Evaluate package compatibility with existing board footprints and assembly processes.

RF FETs, MOSFETs Part Context

This part belongs to the NXP Airfast series of RF power transistors, designed specifically for base station applications. The series emphasizes high reliability and linear performance in silicon LDMOS technology. It complements other components in NXP's RF portfolio for complete transmitter solutions.

RF FETs, MOSFETs Replacement Considerations

The product status is listed as discontinued. Engineers should consult NXP for current recommended replacements or obsolescence notices. Verify functional equivalence regarding pinout, thermal resistance, and RF performance parameters when selecting substitute parts.