A2T21H410-24SR6

RF FETs, MOSFETs Overview

The A2T21H410-24SR6 is a 72 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 2110 to 2170 MHz. The device requires a 28 V test voltage and provides a gain of 15.6 dB. It is manufactured by NXP USA Inc. and is currently classified as obsolete, meaning it is no longer in active production.

RF FETs, MOSFETs Feature Summary

• Designed specifically for asymmetrical Doherty amplifier architectures in cellular infrastructure
• Optimized for high-efficiency RF power amplification in mobile communication base stations
• Utilizes Lateral Diffused Metal Oxide Semiconductor (LDMOS) technology for robust performance

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Mobile communication infrastructure systems
• Asymmetrical Doherty RF amplifier modules

RF FETs, MOSFETs Procurement Notes

This component is officially listed as obsolete by NXP USA Inc. and is no longer manufactured. Procurement should focus on verifying the authenticity of existing stock from authorized distributors or surplus suppliers. Ensure that any available units are RoHS3 compliant and have been stored under appropriate moisture sensitivity levels to prevent degradation before installation.

RF FETs, MOSFETs Selection Notes

Engineers selecting this part must account for its discontinued status when designing new products. The specific 2110–2170 MHz frequency range and 72 W output power define its operational envelope. Compatibility with 28 V supply rails and required biasing networks for Doherty configurations must be validated against current design requirements.

RF FETs, MOSFETs Part Context

The A2T21H410-24SR6 belongs to NXP’s portfolio of RF power transistors intended for telecommunications infrastructure. As an LDMOS device, it supports high-power linear amplification tasks typical in modern cellular networks. Its designation indicates specific electrical characteristics tailored for the 2100 MHz band operations.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are provided in the source documentation. Due to the obsolete status, engineers must evaluate alternative LDMOS transistors with matching frequency ranges (2110–2170 MHz), power output (approx. 72 W), and package compatibility. Cross-referencing with current NXP product lines is recommended.