A2T23H300-24SR6

RF FETs, MOSFETs Overview

The A2T23H300-24SR6 is an Airfast RF power LDMOS transistor designed for operation in the 2300–2400 MHz frequency range. It delivers 69 W average output power at a drain-source voltage of 28 V. The device features a TO-270-2 surface mount package, providing high thermal efficiency and robust performance for demanding RF applications.

RF FETs, MOSFETs Feature Summary

• Airfast technology for enhanced thermal management
• High average power capability in compact form factor
• Optimized for cellular base station amplification

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Broadband RF signal generation
• Wireless communication infrastructure

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP distributors. Confirm RoHS compliance status and check for obsolete status indicators. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to assembly.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.3–2.4 GHz band. Evaluate thermal resistance requirements against system cooling capabilities. Compare gain and power density specifications with alternative LDMOS devices for optimal circuit integration.

RF FETs, MOSFETs Part Context

Part of the A2T23 series, this device represents NXP's Airfast LDMOS technology. It is engineered specifically for high-power RF applications, offering superior reliability compared to traditional silicon MOSFETs in base station environments.

RF FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes within the A2T23 family. Verify that alternative components match the 28 V rating and 2300–2400 MHz operational bandwidth before implementation.