A2T26H300-24SR6

RF FETs, MOSFETs Overview

The A2T26H300-24SR6 is an Airfast RF Power LDMOS Transistor manufactured by NXP Semiconductors. It operates within the 2496 MHz to 2690 MHz frequency band, delivering a typical average output power of 300 W at a drain voltage of 28 V. The device utilizes Silicon (Si) technology and features an N-Channel configuration with a Drain-Source Breakdown Voltage (Vds) of 65 V. Designed for surface mount installation, it employs the NI-780S-4L2L-6 package. Key electrical characteristics include a gain of approximately 14.7 dB and a continuous drain current ranging from 700 mA to 1.2 A. The component supports a gate-source voltage range of -6 V to +10 V with a threshold voltage of 1.6 V, ensuring robust performance in high-power RF applications.

RF FETs, MOSFETs Feature Summary

• High average output power capability of 300 W suitable for demanding RF infrastructure
• Optimized for broadband operation across the 2496 MHz to 2690 MHz cellular bands
• Advanced Airfast LDMOS technology providing high linearity and efficiency
• Designed for surface-mount integration using specialized NI-780S packaging

RF FETs, MOSFETs Applications

• Cellular base station power amplification
• Broadband RF signal generation
• Wireless communication infrastructure

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix SR6 against official NXP documentation to confirm tape-and-reel specifications and handling requirements. Confirm availability status as distribution data may indicate limited supply or end-of-life conditions. Ensure compatibility with NI-780S-4L2L-6 mounting pads and thermal management solutions during procurement planning.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high linear power output in the 2.5 GHz range. Evaluate thermal resistance and heat sinking capabilities due to the 300 W power dissipation. Compare gain and efficiency metrics against alternative LDMOS devices if system constraints require different voltage levels or package footprints.

RF FETs, MOSFETs Part Context

This transistor belongs to NXP's Airfast family of RF power LDMOS transistors, engineered for high-performance wireless infrastructure. The series is characterized by advanced process technologies that enhance reliability and power density. These components are standard selections for modern cellular base stations requiring wide bandwidth and high linearity.

RF FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers for the A2T26H300-24SR6 were not identified in the provided reference materials. Consult NXP technical support for qualified alternatives.