A2T27S007NT1

RF FETs, MOSFETs Overview

The A2T27S007NT1 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates across a frequency range of 400 to 2700 MHz with a typical average output power of 28.8 dBm at 28 Vdc. The device features a DFN 4x6 plastic package and includes integrated ESD protection rated Class 1C for the Human Body Model and C3 for the Charge Device Model. Maximum ratings include a drain-source voltage of 65 Vdc, gate-source voltage from -6.0 to +10 Vdc, and an operating junction temperature range up to 225 °C.

RF FETs, MOSFETs Feature Summary

• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems
• Universal broadband driver optimized for Doherty applications

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Digital predistortion error correction systems
• Doherty amplifier configurations

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T1 indicates tape and reel packaging containing 1,000 units on a 16 mm tape width and 7-inch reel. Confirm that the component utilizes a DFN 4x6 plastic package. Ensure compatibility with the specified thermal management requirements for the exposed backside source terminal during assembly.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and ruggedness. The device supports universal broadband driving and is specifically engineered for integration into digital predistortion architectures. Evaluate thermal resistance characteristics and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors. It is categorized as an RF MOSFET transistor utilizing Silicon technology. The product falls under the legacy RF power category, serving as a discrete solution for radio frequency power amplification in communication systems.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical specifications before considering alternative models.