A2V07H400-04NR3

RF FETs, MOSFETs Overview

The A2V07H400-04NR3 is a 107 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 420 to 851 MHz frequency range and requires a 48 Vdc drain supply. The device integrates carrier and peaking sides optimized for digital predistortion systems, featuring an OM-780-4L plastic package with an exposed source terminal.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Extended negative gate-source voltage range for improved Class C operation
• Optimized design compatibility with digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station power amplification
• Asymmetrical Doherty amplifier configurations
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 indicates tape and reel packaging containing 250 units on a 32 mm tape width and 13-inch reel. Confirm the component matches the OM-780-4L plastic package designation. Ensure the procurement request aligns with the manufacturer's standard terms and conditions regarding product suitability and liability disclaimers.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated Doherty functionality across the 420 to 851 MHz band. The device supports 48 Vdc operation and includes internal input matching. Designers must account for the exposed backside source terminal during thermal management and PCB layout implementation.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast RF Power LDMOS Transistor series. It utilizes N-channel enhancement-mode lateral MOSFET technology. The device is manufactured by NXP B.V. and distributed under the NXP USA Inc. brand portfolio.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the operating frequency range of the A2V07H400-04NR3?

The device covers a frequency range of 420 to 851 MHz.

How is the package terminal configuration defined?

The exposed backside of the OM-780-4L package serves as the source terminal for the transistor.

What is the typical drain efficiency at 623 MHz?

Typical drain efficiency is 59.4% when operating at 623 MHz with 107 W average output power.