A2V07H525-04NR6

RF FETs, MOSFETs Overview

The A2V07H525-04NR6 is a 120 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 595 to 851 MHz. It operates at 48 Vdc with typical drain efficiency around 54% and gain near 17.5 dB under single-carrier W-CDMA conditions. The device features an OM-1230-4L plastic package with exposed source terminal.

RF FETs, MOSFETs Feature Summary

• Advanced high performance in-package Doherty configuration
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station output stages
• Wideband RF power amplification
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel specifications, which indicates 150 units per 56 mm tape width on a 13-inch reel. Confirm package type OM-1230-4L matches design requirements. Ensure compatibility with NXP's thermal characterization methodology AN1955 for accurate junction temperature assessment during integration.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular base station designs requiring integrated Doherty architecture. Consider the 48 Vdc operating voltage and 120 W average output power capability. Evaluate thermal resistance characteristics and load pull data for impedance matching networks. Verify suitability for digital predistortion systems requiring high linearity and stability.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS Transistor series, specifically optimized for asymmetric Doherty amplifier configurations. It integrates carrier and peaking sections within a single package to simplify broadband cellular base station designs. The technology supports wide instantaneous bandwidth requirements typical of modern wireless communication standards.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-reference pinout compatibility and electrical parameters before substitution.