A3G18H500-04SR3

RF FETs, MOSFETs Overview

The A3G18H500-04SR3 is a 107 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates in the 1805 to 2200 MHz frequency range with a 48 Vdc drain supply. Typical single-carrier W-CDMA performance at 1840 MHz yields 107 W average output power, 15.4 dB gain, and 57.7% drain efficiency. The device features high terminal impedances for optimal broadband performance and advanced in-package Doherty architecture.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• High terminal impedances for optimal broadband performance
• Capable of withstanding extremely high output VSWR conditions

RF FETs, MOSFETs Applications

• Cellular base station transmitters
• Wideband RF power amplification
• Asymmetrical Doherty amplifier designs

RF FETs, MOSFETs Procurement Notes

Verify the complete part number including the R3 suffix for tape and reel packaging specifications. Confirm that the application design strictly adheres to the guaranteed operating frequency range of 1805 to 2200 MHz, as performance outside this band is not guaranteed by NXP Semiconductors.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high average power output within the 1800 MHz band. Ensure the thermal management system can handle the specified thermal resistance values. Verify compatibility with the required biasing sequence for depletion mode GaN transistors in Doherty configurations to prevent device damage.

RF FETs, MOSFETs Part Context

This device belongs to NXP's Airfast RF Power GaN Transistor family. It utilizes an NI-780S-4L package. The datasheet revision history indicates updates to the upper frequency range and load pull performance data across the 1800–2200 MHz band.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.