A3G26D055N-2515

RF FETs, MOSFETs Overview

The A3G26D055N is an Airfast RF power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth from 100 to 2690 MHz. It features a symmetrical Doherty architecture with high terminal impedances for optimal broadband performance. The device operates at a recommended drain voltage of 48 Vdc and withstands up to 125 Vdc. It delivers 8 W average output power in the 2515–2675 MHz band, achieving a typical drain efficiency of 52.1% at 2515 MHz. The component is housed in a DFN package measuring 7 mm by 6.5 mm.

RF FETs, MOSFETs Feature Summary

• Symmetrical Doherty configuration optimized for massive MIMO active antenna systems
• High terminal impedances enabling optimal broadband performance across 100 to 2690 MHz
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Designed for low complexity analog or digital linearization systems

RF FETs, MOSFETs Applications

• Cellular base station infrastructure
• Massive MIMO active antenna systems for 5G networks
• Wideband RF power amplification requiring high linearity

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm tape and reel specifications. Confirm that the moisture sensitivity level rating aligns with your assembly process requirements. Ensure the design accounts for the specified thermal resistance values to maintain channel temperature within safe operating limits during continuous operation.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers for frequency ranges spanning 100 to 2690 MHz. The symmetrical Doherty topology suits applications demanding high efficiency and linearity simultaneously. Consider the DFN package dimensions for PCB layout constraints. Verify compatibility with 48 Vdc supply rails and ensure biasing circuits support the required gate threshold voltages for both carrier and peaking sides.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast series of Gallium Nitride (GaN) on Silicon devices. The series targets high-power RF applications in telecommunications infrastructure. The A3G26D055N specifically addresses the need for wideband coverage in modern base stations, utilizing advanced packaging to manage thermal dissipation and electrical performance in compact form factors.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.