A3G26H501W17SR3

RF FETs, MOSFETs Overview

The A3G26H501W17SR3 is a 56 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates in the 2496 to 2690 MHz frequency range with a 48 Vdc drain supply. The device features high terminal impedances for optimal broadband performance and advanced in-package Doherty architecture. It withstands extremely high output VSWR and offers improved linearized error vector magnitude with next-generation signals.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• High terminal impedances for optimal broadband performance
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Improved linearized error vector magnitude with next-generation signal

RF FETs, MOSFETs Applications

• Cellular base station applications
• Wide instantaneous bandwidth systems
• Asymmetrical Doherty amplifier designs

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3, which indicates tape and reel packaging containing 250 units on a 44 mm tape width and 13-inch reel. Confirm that the NI-780S-4S2S package type matches your thermal and mechanical requirements. Ensure compatibility with the specified biasing sequence for depletion mode GaN transistors during system integration.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring 56 W average output power within the 2496–2690 MHz band. Verify that the application supports the required 48 Vdc operating voltage and 350 mA quiescent current. Consider the thermal resistance characteristics and maximum channel temperature limits when designing the heatsink interface for reliable operation under high-power conditions.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power GaN Transistor series, specifically engineered for high-efficiency cellular infrastructure. It utilizes gallium-nitride technology to deliver robust performance in demanding RF environments. The device integrates carrier and peaking sections into a single package to simplify Doherty amplifier implementation.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

RF FETs, MOSFETs FAQ

What is the guaranteed operating frequency range?

Performance is guaranteed for applications operating in the 2496 to 2690 MHz band.

How should the device be turned off?

Turn RF power off, reduce VGS down to -5 V, reduce VDS down to 0 V, and then turn off VGS.

What is the typical drain efficiency at 2690 MHz?

The typical drain efficiency is 47.4% at 2690 MHz under single-carrier W-CDMA characterization conditions.