A3T21H450W23SR6

RF FETs, MOSFETs Overview

The A3T21H450W23SR6 is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2110 to 2200 MHz frequency range and delivers 87 W average output power at a 30 Vdc drain supply. The device features integrated input and output matching networks, supporting digital predistortion systems. Key electrical characteristics include a typical power gain of 15.4 dB and a drain efficiency of 47.0% under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Greater negative gate-source voltage range for improved Class C operation
• Capable of withstanding extremely high output VSWR and broadband operating conditions

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wide instantaneous bandwidth RF systems
• Digital predistortion error correction systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel configuration (150 units, 56 mm tape width, 13-inch reel) before procurement. Confirm that the package type ACP-1230S-4L2S matches the mechanical constraints of the target assembly. Ensure compatibility with the specified DC supply requirements and thermal management solutions outlined in the datasheet.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetric Doherty amplifiers for the 2110–2200 MHz band. The device requires a single DC power supply as VDDA and VDDB must be tied together. Consider the thermal resistance of 0.16 °C/W and the maximum junction temperature of +225 °C for heat sink design. Verify load pull impedance data for optimal power and efficiency tuning across the bandwidth.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast RF Power LDMOS Transistor series. It utilizes Silicon technology and is housed in the ACP-1230S-4L2S package. The device is an N-Channel Enhancement-Mode Lateral MOSFET intended for high-power RF applications.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.