A3V09H521-24SR6

Description：RF MOSFET LDMOS
Series：*

SKU:1e4a2db38dbe Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

A3V09H521-24SR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A3V09H521-24SR6

Description：RF MOSFET LDMOS
Series：*
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：-
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RF FETs, MOSFETs datasheet and documents for A3V09H521-24SR6

A3V09H521-24SR6

RF FETs, MOSFETs Overview

The A3V09H521-24SR6 is an N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates within the 720 to 960 MHz frequency range and delivers 107 W average output power at a 48 Vdc drain supply. The device features an asymmetrical Doherty configuration with internal input and output matching, utilizing the NI-1230S-4L2L package.

RF FETs, MOSFETs Feature Summary

Advanced high-performance integrated Doherty architecture
Greater negative gate-source voltage range for improved Class C operation
Designed specifically for digital predistortion error correction systems

RF FETs, MOSFETs Applications

Cellular base station transmitters
Digital predistortion linearization systems
Single-carrier W-CDMA amplification

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm RoHS compliance status via official documentation. Ensure storage temperature remains within specified limits to maintain reliability. Check for end-of-life status before finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. Validate thermal management capabilities against junction-to-case resistance specifications. Ensure bias networks accommodate the specific quiescent current requirements for optimal Doherty performance.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series by NXP Semiconductors. It represents a specialized solution for high-power RF amplification in modern telecommunications infrastructure, focusing on efficiency and linearity metrics.