A5G21H605W19NR3

RF FETs, MOSFETs Overview

The A5G21H605W19NR3 is an asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications. It operates within the 2110 MHz to 2200 MHz frequency range and delivers 85 W average output power at a 48 Vdc drain supply. The device features high terminal impedances for broadband performance and withstands extremely high output VSWR. Key electrical parameters include a drain-source voltage of 125 Vdc, operating voltage of 48 Vdc, and maximum channel temperature of 225 °C. Thermal resistance by finite element analysis is 0.8 °C/W.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty configuration
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions

RF FETs, MOSFETs Applications

• Cellular base station applications requiring wide instantaneous bandwidth capability
• Applications operating in the 2110 MHz to 2200 MHz band

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 indicates tape and reel packaging containing 250 units on a 44 mm tape width and 13-inch reel. Confirm the OM-780-4S4S package type matches design requirements. Ensure compatibility with NXP reference circuit layouts and biasing sequences for Doherty configurations. Check for moisture sensitivity level 3 ratings and appropriate reflow soldering procedures per application notes.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring 85 W average power in the 2110–2200 MHz band. Verify that the 48 Vdc operating voltage aligns with system power supplies. Consider the thermal management requirements given the 225 °C maximum channel temperature limit. Ensure the design accommodates the exposed backside source terminal for proper grounding and heat dissipation.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power GaN Amplifier family from NXP Semiconductors. It utilizes Gallium Nitride on Silicon technology to achieve high efficiency and power density. The device is characterized for single-carrier W-CDMA signals with specific peak-to-average power ratios. It is intended for integration into printed circuit boards using specified reference layouts.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.