ABC858CW-HF

Single Bipolar Transistors Overview

The ABC858CW-HF is a PNP general-purpose bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of 30 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW. The device features a maximum DC current gain (hFE) of 800 and a collector-emitter saturation voltage of 650 mV. Operating temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for single-transistor applications
• Silicon-based construction for reliable switching performance
• SOT-323-3 surface-mount packaging for compact circuit integration

Single Bipolar Transistors Applications

• General purpose switching circuits
• Signal amplification stages
• Automotive electronic control modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'C' against the required datasheet specifications, as it may denote distinct electrical characteristics compared to other variants like 'B'. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the SOT-323-3 footprint matches the PCB design requirements. Validate the maximum DC current gain limits for the specific application context.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 30 V collector-emitter breakdown voltage is required. The 100 mA continuous current rating suits low-power switching tasks. Consider the 200 mW power dissipation limit for thermal management. The high hFE max of 800 supports efficient signal amplification. Verify compatibility with the target operating temperature range of -65°C to +150°C.

Single Bipolar Transistors Part Context

This part belongs to the ABC858 series of general-purpose transistors from Comchip Technology. It shares the SOT-323-3 form factor with related models such as ABC856BW-HF and ABC858BW-HF. The primary distinction lies in the voltage ratings and gain specifications defined by the suffix characters. These components are designed for standard silicon BJT applications requiring small-signal handling.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.