AFT05MS003NT1

RF FETs, MOSFETs Overview

The AFT05MS003NT1 is an N-channel RF LDMOS transistor designed for mobile two-way radio applications. It operates within a frequency range of 136 to 520 MHz, delivering 70 W average output power at 12.5 V supply voltage. The device features high gain and broadband performance suitable for large-signal common source amplifier configurations. Key electrical parameters include a drain current of 2.6 A, breakdown voltage of 500 V, and dissipation power of 30.5 W. It offers exceptional thermal performance and ruggedness, characterized for operation across the full band with high linearity.

RF FETs, MOSFETs Feature Summary

• Characterized for operation from 136 to 520 MHz
• High gain and broadband performance for wide frequency range utilization
• Integrated ESD protection and stability enhancements
• Exceptional thermal performance and extreme ruggedness

RF FETs, MOSFETs Applications

• Mobile two-way radio equipment
• Large-signal common source amplifier applications
• VHF/UHF band mobile radio output stages

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix (e.g., R1 or GNR1) against the required packaging format, as the base part number may correspond to different reel specifications. Confirm the device status is active, as some variants in this family may be end-of-life. Ensure compatibility with the intended operating voltage and frequency band before procurement. Cross-reference the datasheet revision date to ensure access to the latest thermal characterization data.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring robust RF power amplification in the VHF and UHF bands. The device is optimized for mobile radio environments where ruggedness and thermal stability are critical. Consider the integrated ESD protection and stability enhancements when designing circuits that require minimal external stabilization components. Evaluate the package type and pin configuration against the PCB layout constraints.

RF FETs, MOSFETs Part Context

This component belongs to NXP's AFT05 series of RF power LDMOS transistors, specifically engineered for mobile communication systems. The series is known for providing high linearity and efficiency in broadband amplifier designs. The AFT05MS003 variant is tailored for medium-power applications, balancing output capability with thermal management requirements typical in portable and mobile radio hardware.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers: AFT05MP075N, AFT05MS004N, AFT05MS006N, AFT05MS031N.