AFT05MS031GNR1

RF FETs, MOSFETs Overview

The AFT05MS031GNR1 is an N-Channel enhancement-mode LDMOS transistor designed for mobile two-way radio applications from 136 to 520 MHz. It delivers 31 W output power at 13.6 Vdc with a typical gain of 17.7 dB and drain efficiency up to 71.4%. The device features unmatched input and output impedances, integrated ESD protection, and stability enhancements. It operates within a junction temperature range of -40°C to +225°C and utilizes a TO-270-2 plastic package.

RF FETs, MOSFETs Feature Summary

• Characterized for broadband operation across the 136 to 520 MHz frequency range
• Features unmatched input and output impedances allowing wide frequency utilization
• Includes integrated electrostatic discharge (ESD) protection and stability enhancements
• Capable of high linearity suitable for TETRA, SSB, and LTE modulation schemes

RF FETs, MOSFETs Applications

• Output stage for VHF band mobile radio equipment
• Output stage for UHF band mobile radio equipment
• Large-signal common source amplifier applications in mobile radio systems

RF FETs, MOSFETs Procurement Notes

Verify the GNR1 suffix indicates gull-wing lead configuration compared to the NR1 straight lead variant. Confirm RoHS compliance status via official documentation. Check moisture sensitivity level ratings prior to soldering. Ensure storage conditions adhere to specified limits to prevent degradation before assembly.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring ruggedness and full power across the 136-520 MHz band. Consider the thermal resistance characteristics for heat dissipation requirements. Evaluate the specific impedance matching networks provided in the datasheet reference circuits for optimal performance at target frequencies.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast Wideband RF Power LDMOS Transistor family by NXP Semiconductors. It is engineered specifically for high-power, large-signal amplifier stages in portable and mobile communication devices operating in VHF and UHF bands.

RF FETs, MOSFETs Replacement Considerations

The AFT05MS031NR1 serves as a direct functional substitute with identical electrical specifications but differs in lead form factor, utilizing straight leads instead of gull-wing configurations.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +225°C.

Does the device include internal protection mechanisms?

Yes, the transistor includes integrated ESD protection and stability enhancements.

What is the typical power gain at 520 MHz?

The typical power gain is 17.7 dB when operating at 520 MHz with 13.6 Vdc supply voltage.