AFT09MP055GNR1

RF FETs, MOSFETs Overview

The AFT09MP055GNR1 is a high ruggedness N-channel enhancement-mode LDMOS transistor designed for mobile two-way radio applications operating from 764 to 941 MHz. It features integrated input matching, ESD protection, and stability enhancements within an over-molded plastic package. The device supports broadband full power across the 764-870 MHz band and narrowband performance at 870 MHz. Key electrical parameters include a drain-source voltage of 40 Vdc, operating voltage up to 19 Vdc, and junction temperature capability up to 225°C. Typical narrowband performance at 870 MHz yields 57 W output power with 69% efficiency.

RF FETs, MOSFETs Feature Summary

• Integrated input matching network improves broadband performance across the operational frequency range.
• Extreme ruggedness ensures no device degradation under severe load mismatch conditions exceeding 65:1 VSWR.
• High linearity characteristics optimized for TETRA and SSB modulation schemes.
• Over-molded plastic packaging capable of withstanding junction temperatures up to 225°C.

RF FETs, MOSFETs Applications

• Output stage for 800 MHz band mobile radio equipment
• Output stage for 700 MHz band mobile radio equipment
• Large-signal common source amplifier applications in mobile transceivers

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation. Confirm that the GNR1 designation corresponds to the gull-wing lead configuration and tape-and-reel packaging format as specified in the official datasheet. Ensure compatibility with the required thermal management solutions given the 225°C junction temperature rating. Cross-reference the part number with authorized distributor catalogs to confirm availability and authenticity before procurement.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high ruggedness and broadband performance in the 764-941 MHz range. Consider the 225°C junction temperature capability when designing thermal interfaces. Verify that the system impedance matches the provided test circuit values for optimal gain and efficiency. Evaluate the need for integrated input matching versus external networks based on the specific application bandwidth requirements.

RF FETs, MOSFETs Part Context

This device belongs to the Airfast RF Power LDMOS Transistor family, specifically engineered for mobile radio output stages. It utilizes lateral MOSFET technology to deliver high power density and reliability. The product line emphasizes ruggedness and thermal performance for demanding communication environments.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent devices. No direct public substitute part numbers are confirmed in the provided documentation.

RF FETs, MOSFETs FAQ

What is the maximum junction temperature for the AFT09MP055GNR1?

The maximum operating junction temperature range extends up to +225°C.

How does the device perform under extreme load mismatch?

The device exhibits extreme ruggedness with no degradation observed under VSWR conditions greater than 65:1 at all phase angles.

What modulation types is the high linearity of this transistor suitable for?

The high linearity characteristics are suitable for TETRA and SSB modulation schemes.