AFT18H356-24SR6

RF FETs, MOSFETs Overview

The AFT18H356-24SR6 is a GaN HEMT power transistor manufactured by NXP USA Inc., designed for high-frequency RF applications. It operates within the 1805 MHz to 1880 MHz frequency range, delivering an average output power of 71 W at a supply voltage of 28 V. This component is engineered for efficiency and linearity in demanding wireless infrastructure environments.

RF FETs, MOSFETs Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for enhanced thermal conductivity and breakdown voltage.
• Optimized for linear operation in wideband communication systems requiring high power density.
• Designed with robust packaging to withstand harsh environmental conditions typical of base station deployments.

RF FETs, MOSFETs Applications

• Base station power amplifiers
• Wireless infrastructure equipment
• Broadband communication systems

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'SR6' against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with existing thermal management designs, as GaN devices require precise heat sinking. Cross-reference the part number with current availability status, as manufacturing updates may occur without functional changes.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers for the 1805-1880 MHz band requiring approximately 71 W average power. Consider its GaN technology benefits over LDMOS for size reduction and thermal performance. Evaluate biasing requirements carefully to achieve optimal linearity and efficiency targets specified in the datasheet.

RF FETs, MOSFETs Part Context

This device belongs to NXP's portfolio of RF power transistors aimed at modernizing cellular network infrastructure. It complements other high-power GaN solutions by offering a balance of output power and bandwidth suitable for evolving 4G LTE and 5G NR standards.

RF FETs, MOSFETs Replacement Considerations

Consult NXP technical support for direct pin-to-pin replacements or upgraded generations. Verify that any substitute maintains the same 28 V operating voltage and package footprint to ensure board compatibility.

RF FETs, MOSFETs FAQ

What is the primary material system used in this transistor?

It utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology.

Does this component support linear modulation schemes?

Yes, it is optimized for linear operation in wideband communication systems.