AFT20P060-4NR3

RF FETs, MOSFETs Overview

The AFT20P060-4NR3 is an N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1805 to 2170 MHz and delivers a typical average output power of 6.3 W at 28 Vdc with a quiescent drain current of 450 mA. The device features internal matching on both input and output ports, optimized for Doherty amplifier configurations and digital predistortion error correction systems. It provides high gain and efficiency across its broadband operation.

RF FETs, MOSFETs Feature Summary

• Optimized for Doherty applications with greater negative gate-source voltage range for improved Class C operation
• Designed specifically for digital predistortion error correction systems
• Features internal input and output matching for simplified circuit design
• Capable of handling load mismatch conditions without device degradation

RF FETs, MOSFETs Applications

• Cellular base station applications covering 1805 to 2170 MHz
• Doherty power amplifier architectures
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt as the exposed backside serves as the source terminal. Ensure proper ESD handling protocols are followed during storage and assembly due to the sensitivity of the semiconductor junctions. Validate that the ordering suffix matches the required reel specifications for automated placement processes.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers requiring integrated matching networks to reduce external component count. Consider its thermal resistance characteristics for heat sink sizing in high-power density environments. Evaluate its performance under specific load mismatch conditions to ensure system robustness. Verify compatibility with the intended biasing scheme, particularly regarding the negative gate-source voltage requirements for Class C operation.

RF FETs, MOSFETs Part Context

This device belongs to the Airfast RF Power LDMOS transistor family from Freescale Semiconductor, now part of NXP Semiconductors. These transistors utilize silicon technology to provide high power density and efficiency for wireless infrastructure. The product line addresses the growing demand for linear power amplification in modern cellular communication standards.

RF FETs, MOSFETs Replacement Considerations

The datasheet lists AFT20P060-4GNR3 as a variant with a different package configuration (gull-wing leads). Direct substitution requires verifying mechanical fit and lead forming capabilities. No other cross-references or substitute part numbers are documented in the official data sheet.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range is -40 to +225 °C.

How is the device protected against electrostatic discharge?

The device includes integrated ESD protection rated at Class 2 for the Human Body Model and Class B for the Machine Model.

Does the AFT20P060-4NR3 require external matching components?

No, the device is internally matched on both the input and output ports, simplifying the amplifier design process.