AFT21S220W02GSR3

RF FETs, MOSFETs Overview

The AFT21S220W02GSR3 is an RF LDMOS FET manufactured by NXP USA Inc., designed for high-power radio frequency applications. It operates with a drain voltage of 28 V and delivers an output power of 45 W at a frequency of 2.4 GHz. The device provides a gain of 17.9 dB and requires a gate current of 1.1 A for operation. Packaged in the NI-780GS-2L surface-mount format, it is rated for a maximum voltage of 65 V.

RF FETs, MOSFETs Feature Summary

• High-efficiency LDMOS technology optimized for RF power amplification
• Surface-mount packaging suitable for automated assembly processes
• Designed for stable performance at 2.4 GHz operating frequencies

RF FETs, MOSFETs Applications

• Wireless infrastructure base stations
• Industrial, Scientific, and Medical (ISM) equipment
• Point-to-point microwave communication links

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt to ensure solderability. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions before final design integration.

RF FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the 45 W output capability. Ensure the PCB layout supports the NI-780GS-2L footprint. Verify that the driving circuit can supply the required 1.1 A gate current for optimal performance.

RF FETs, MOSFETs Part Context

This component belongs to the AFT21 series of RF power transistors from NXP Semiconductors. The series is engineered for robust performance in demanding RF environments, offering a balance of power density and linearity for modern communication systems.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution lists for compatible alternatives within the same product family. Verify pinout compatibility and electrical parameter alignment before replacing the original component.