AFT21S220W02SR3

RF FETs, MOSFETs Overview

The AFT21S220W02SR3 is a broadband RF power LDMOS transistor designed for high-power applications. It operates within the 470-860 MHz frequency range, delivering 90 W of output power at a 50 V supply voltage. This component is part of NXP's Airfast portfolio, engineered for robust performance in demanding radio communication environments.

RF FETs, MOSFETs Feature Summary

• Broadband operation across the 470-860 MHz spectrum
• High power density with 90 W output capability
• Integrated thermal management for reliable operation

RF FETs, MOSFETs Applications

• Base station transmitters
• Radio communication systems
• Industrial, Scientific, and Medical (ISM) equipment

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'R3' against official documentation to confirm reel packaging specifications. Ensure compatibility with existing thermal interface materials and biasing networks. Confirm RoHS compliance status for the specific shipment batch. Cross-reference the 12NC code for accurate ordering details.

RF FETs, MOSFETs Selection Notes

Select this device for designs requiring wide bandwidth coverage without retuning. Evaluate thermal resistance requirements for the intended heatsink solution. Consider the 50 V operating voltage when designing power supply rails. Assess package compatibility with existing PCB footprints.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast LDMOS family, known for high linearity and efficiency. It complements NXP's broader portfolio of RF power solutions for infrastructure. The technology supports scalable power amplifier designs for modern wireless standards.

RF FETs, MOSFETs Replacement Considerations

Official substitutes include the AFIC10275N and AFIC901N. Verify pinout and thermal characteristics before substitution. Consult datasheets for electrical parameter differences.