RF FETs, MOSFETs AFT26P100-4WSR3-NXP product image

AFT26P100-4WSR3-NXP

$130.31
  • Description:RF MOSFET
  • Series:*

SKU:a2d67ddffbb1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AFT26P100-4WSR3-NXP is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT26P100-4WSR3-NXP

  • Description:RF MOSFET
  • Series:*
  • Mfr:NXP USA Inc.
  • Package:Bulk
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT26P100-4WSR3-NXP

AFT26P100-4WSR3-NXP

RF FETs, MOSFETs Overview

The AFT26P100-4WSR3 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring very wide instantaneous bandwidth. It operates within the 2496 to 2690 MHz frequency range, delivering an average output power of 22 watts at a supply voltage of 28 volts. The device features a gain of 15.1 dB and a maximum drain current of 200 mA. Packaged in Tape & Reel (TR) format, this component supports high-efficiency linear amplification suitable for modern wireless infrastructure.

RF FETs, MOSFETs Feature Summary

  • Symmetrical Doherty architecture optimized for wide instantaneous bandwidth
  • LDMOS technology providing robust RF power performance
  • Designed specifically for demanding cellular base station environments

RF FETs, MOSFETs Applications

  • Cellular base station linear amplification
  • Wideband RF signal processing
  • Wireless infrastructure power modules

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against official NXP documentation to ensure compatibility with system requirements. Confirm that the Tape & Reel packaging meets handling standards. Check product status as some listings indicate obsolete status; validate availability through authorized distributors before finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component when designing systems requiring symmetrical Doherty configurations for wideband cellular applications. Ensure the 28V supply rail aligns with existing power architectures. Consider the 22W average power capability relative to thermal management constraints and verify that the 2496-2690 MHz operational range covers all target frequency bands.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Ariat series of RF power transistors, which are engineered for high-performance wireless communications. The AFT26P100 variant specifically targets the LTE and 5G spectrum segments, offering a balance between linearity and efficiency for base station power amplifiers.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers include AFT26P100-4WGSR3. Verify pinout and electrical parameter equivalence before substitution.

AFT26P100-4WSR3-NXPAFT26P100-4WSR3-NXP
$130.31
Buy Now