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AFT26P100-4WSR3-NXP is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET. Review the specifications below when checking this part for your BOM.
The AFT26P100-4WSR3 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring very wide instantaneous bandwidth. It operates within the 2496 to 2690 MHz frequency range, delivering an average output power of 22 watts at a supply voltage of 28 volts. The device features a gain of 15.1 dB and a maximum drain current of 200 mA. Packaged in Tape & Reel (TR) format, this component supports high-efficiency linear amplification suitable for modern wireless infrastructure.
Verify the specific suffix configuration against official NXP documentation to ensure compatibility with system requirements. Confirm that the Tape & Reel packaging meets handling standards. Check product status as some listings indicate obsolete status; validate availability through authorized distributors before finalizing procurement plans.
Select this component when designing systems requiring symmetrical Doherty configurations for wideband cellular applications. Ensure the 28V supply rail aligns with existing power architectures. Consider the 22W average power capability relative to thermal management constraints and verify that the 2496-2690 MHz operational range covers all target frequency bands.
This part belongs to NXP's Ariat series of RF power transistors, which are engineered for high-performance wireless communications. The AFT26P100 variant specifically targets the LTE and 5G spectrum segments, offering a balance between linearity and efficiency for base station power amplifiers.
Public confirmed substitute part numbers include AFT26P100-4WGSR3. Verify pinout and electrical parameter equivalence before substitution.
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