AFT27S010NT1

RF FETs, MOSFETs Overview

The AFT27S010NT1 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for cellular base station applications. It operates across a frequency range of 728 to 3600 MHz with a typical average output power of 1.26 W at 28 Vdc. The device features internal RF feedback and is optimized for digital predistortion error correction systems. Key electrical characteristics include a drain-source voltage rating of up to 65 Vdc, a gate-source voltage range from -6.0 to +10 Vdc, and a thermal resistance junction-to-case of 3.5 °C/W. It utilizes the PLD-1.5W plastic package.

RF FETs, MOSFETs Feature Summary

• Greater negative gate-source voltage range for improved Class C operation
• Designed specifically for digital predistortion error correction systems
• Universal broadband driven device with integrated internal RF feedback

RF FETs, MOSFETs Applications

• Cellular base station driver stages
• Broadband RF power amplification
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP Semiconductors distributors or official channels. Confirm the specific ordering suffix 'T1' corresponds to the tape and reel configuration containing 1000 units on a 16 mm wide, 7-inch reel. Ensure compliance with RoHS directives as indicated in the material declaration. Check for End of Life status if sourcing from secondary markets.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring broadband coverage from 700 MHz to 3.6 GHz with moderate power output. Evaluate thermal management requirements given the 3.5 °C/W junction-to-case resistance. Consider the PLD-1.5W package dimensions for PCB layout. Verify that the input return loss and gain flatness meet system linearity specifications under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast series of RF power LDMOS transistors developed by Freescale Semiconductor, now NXP Semiconductors. The series targets infrastructure applications needing high reliability and linear performance. The AFT27S010N variant sits within the portfolio alongside other power levels like the AFT27S006N and AFT27S012N, offering a balance between gain and efficiency for multi-band base station deployments.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.