AFT27S012NT1

RF FETs, MOSFETs Overview

The AFT27S012NT1 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for cellular base station applications. It operates across a frequency range of 728 to 2700 MHz with a typical average output power of 1.26 W at VDD = 28 Vdc and IDQ = 90 mA. The device features a PLD-1.5W plastic package, supports a drain-source voltage up to 65 Vdc, and maintains an operating junction temperature range from -40°C to +150°C.

RF FETs, MOSFETs Feature Summary

• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems
• Universal broadband driven device with internal RF feedback

RF FETs, MOSFETs Applications

• Cellular base station applications

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T1 confirms tape and reel packaging containing 1000 units on a 16 mm tape width with a 7-inch reel. Confirm compliance with EU RoHS standards and halogen-free status through the Certificate of Analysis. Check current product lifecycle status as End of Life before finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring broadband RF amplification within the 728 to 2700 MHz spectrum. Ensure thermal management accommodates the specified junction-to-case thermal resistance of 3.4 °C/W under continuous wave conditions. Validate that the system can support the required 28 Vdc supply voltage and appropriate gate biasing for optimal efficiency.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors. It utilizes a PLD-1.5W plastic package configuration. The device is specifically engineered to meet the performance demands of modern wireless communication infrastructure, providing reliable power amplification capabilities.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.