AFV09P350-04GNR3

RF FETs, MOSFETs Overview

The AFV09P350-04GNR3 is a dual-channel N-channel RF power MOSFET manufactured by NXP Semiconductors, formerly Freescale Semiconductor. Designed for high-power radio frequency applications, this silicon-based device operates within the 720 MHz to 960 MHz frequency range. It delivers an average output power of 100 W with a typical gain of 19.2 dB. The component features a drain-source breakdown voltage (Vds) of 105 V and a gate-source threshold voltage (Vgs(th)) of 2.3 V, with a maximum gate-source voltage of +10 V. Packaged in the OM-780G-4 surface-mount format, it supports operation from -40°C to +150°C.

RF FETs, MOSFETs Feature Summary

• Dual-channel architecture providing integrated RF power amplification capabilities within a single package.
• Optimized for high efficiency and linearity in the 720–960 MHz band, supporting robust signal transmission.
• Designed for surface-mount installation using the OM-780G-4 package to facilitate automated assembly processes.

RF FETs, MOSFETs Applications

• Base station power amplifiers in cellular communication infrastructure
• Broadband RF power amplification systems
• Military and aerospace communication equipment

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential supply chain variations. Confirm RoHS compliance status and moisture sensitivity level handling requirements prior to soldering. Check current lifecycle status as availability may be limited or subject to last-time buy conditions. Ensure proper ESD protection during storage and handling to maintain device integrity.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers requiring 100 W average power at 720–960 MHz. Consider the OM-780G-4 package constraints for PCB layout and thermal management. Evaluate the 105 V drain-source voltage against circuit peak voltages. Compare gain and power density against alternative RF MOSFETs if different frequency bands are required.

RF FETs, MOSFETs Part Context

This part belongs to the AFV09P350 series of RF power MOSFETs from NXP Semiconductors. The series targets high-performance base station applications. The specific suffix indicates packaging and reel configuration. NXP acquired Freescale Semiconductor, hence the historical brand association remains relevant for legacy documentation searches.

RF FETs, MOSFETs Replacement Considerations

No official substitute part numbers are documented in public sources. Engineers should evaluate cross-compatibility based on pinout, package dimensions (OM-780G-4), electrical parameters (Vds, Pout, Gain), and frequency response. Verify thermal resistance and gate drive requirements before substituting with other RF MOSFETs.