AFV09P350-04NR3

RF FETs, MOSFETs Overview

The AFV09P350-04NR3 is a dual-channel, N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor from the Airfast series. Designed for cellular base station applications, it operates within the 720 MHz to 960 MHz frequency range and delivers 100 W average output power at 48 Vdc. The device features symmetrical architecture optimized for Doherty configurations, with a drain-source breakdown voltage of 105 Vdc and an operating junction temperature up to +225 °C.

RF FETs, MOSFETs Feature Summary

• Symmetrical dual-channel design specifically engineered for carrier and peaking sides in Doherty amplifier architectures
• Extended negative gate-source voltage capability to facilitate improved Class C operation modes
• Internal input matching network integrated directly into the package structure
• Manufactured using silicon LDMOS technology for high thermal stability and ruggedness

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Doherty linear amplifier systems
• Digital predistortion error correction circuits

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via official documentation before integration. Ensure proper ESD handling protocols are followed during storage and assembly, as the device exhibits specific moisture sensitivity levels requiring controlled reflow conditions.

RF FETs, MOSFETs Selection Notes

Select this component when designing broadband cellular infrastructure requiring high linearity and efficiency. It is suitable for applications utilizing digital predistortion techniques. Verify that the system can accommodate the required 48 Vdc supply and manage thermal dissipation effectively given the low thermal resistance characteristics.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family produced by Freescale Semiconductor, now NXP Semiconductors. The series focuses on high-power density solutions for wireless communications. The OM-780-4L plastic package provides robust mechanical support and efficient heat transfer for surface mount implementations.

RF FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for direct replacements. Evaluate alternative devices based on identical pinout compatibility and similar electrical performance metrics such as gain and efficiency curves.