AFV10700HR5

RF FETs, MOSFETs Overview

The AFV10700HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse applications operating between 960 and 1215 MHz. It delivers peak output power up to 850 W at 1030 MHz with a drain efficiency of 51.7% under 50 Vdc operation. The device features internal input and output matching, ruggedness exceeding 20:1 VSWR, and integrated ESD protection. Packaged in the NI-780H-4L cavity, it supports single-ended, push-pull, or quadrature configurations.

RF FETs, MOSFETs Feature Summary

• Internally matched input and output networks for broadband operation
• High ruggedness handling greater than 20:1 VSWR without degradation
• Integrated ESD protection with extended negative gate-source voltage range

RF FETs, MOSFETs Applications

• Defense and commercial pulse applications
• Secondary surveillance radars
• ADS-B transponders
• DME systems

RF FETs, MOSFETs Procurement Notes

Verify the R5 suffix indicates a 50-unit reel configuration on 56 mm tape width within a 13-inch reel. Confirm package type matches the NI-780H-4L specification. Ensure ordering aligns with the manufacturer's product longevity program requirements for assured supply duration.

RF FETs, MOSFETs Selection Notes

Select this component for high-power pulse amplification requiring robust load mismatch tolerance. The internal matching simplifies circuit design for broadband operations. Verify driver compatibility with recommended units like MRFE6VS25N. Consider thermal management capabilities given the junction temperature limits and dissipation characteristics.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistors family from NXP Semiconductors. It utilizes silicon technology optimized for high power density. The device replaces older bipolar technologies in radar and communication infrastructure applications requiring high efficiency and reliability.

RF FETs, MOSFETs Replacement Considerations

AFV10700HS (NI-780S-4L package)

RF FETs, MOSFETs FAQ

What is the maximum operating voltage?

The device is qualified for a maximum operating voltage of 55 Vdc.

Does the device support Class C operation?

Yes, integrated ESD protection allows for improved Class C operation and gate voltage pulsing.

What is the thermal impedance?

The thermal impedance from junction to case is 0.030 °C/W under specified pulse conditions.