AIKB15N65DH5ATMA1

Single IGBTs Overview

The AIKB15N65DH5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's Trenchstop IGBT5 H5 series. It features a collector-emitter maximum voltage of 650 V and a continuous collector current of 30 A at 25°C. The device has a low saturation voltage of 1.65 V and supports a power dissipation of 105 W. It operates within a temperature range of -40°C to +175°C junction temperature. Packaged in a D2PAK-3 (TO-263-3) surface-mount housing, it utilizes silicon technology for robust switching performance.

Single IGBTs Feature Summary

• Integrates Trenchstop IGBT5 H5 technology for optimized switching characteristics
• Features a low saturation voltage to minimize conduction losses
• Designed for high thermal stability with an extended operating temperature range

Single IGBTs Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Single IGBTs Procurement Notes

Verify the component status before procurement as the AIKB15N65DH5ATMA1 is designated as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors, noting that standard factory packaging quantities may apply. Ensure the specific ordering suffix matches the required reel configuration and check for any alternative recommended replacements if long-term supply assurance is critical for the project lifecycle.

Single IGBTs Selection Notes

Select this component when a 650 V rated IGBT with a 30 A continuous current capability is required in a compact surface-mount package. The low saturation voltage makes it suitable for applications prioritizing efficiency. Consider the thermal management requirements associated with its 105 W power dissipation rating and ensure the PCB layout supports the D2PAK-3 footprint for adequate heat sinking.

Single IGBTs Part Context

This part belongs to Infineon's Trenchstop IGBT5 family, which incorporates field-stop technology to improve switching speed and reduce tail current. The H5 variant specifically targets enhanced performance in terms of switching energy losses compared to previous generations. It is designed for general-purpose power switching applications requiring reliable operation in industrial environments.

Single IGBTs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked NRND, consult official Infineon resources or authorized distributors for current recommended alternatives.