AIMBG75R140M1HXTMA1

$5.21

Description：IGBT
Series：-

SKU:8f70944b4a0b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

AIMBG75R140M1HXTMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT. Review the specifications below when checking this part for your BOM.

Single IGBTs specifications for AIMBG75R140M1HXTMA1

Description：IGBT
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single IGBTs datasheet and documents for AIMBG75R140M1HXTMA1

AIMBG75R140M1HXTMA1

Single IGBTs Overview

The Infineon AIMBG75R140M1HXTMA1 is a CoolSiC™ Automotive Power Device featuring a 750 V breakdown voltage and housed in a PG-TO263-7 package. It operates with a continuous drain current of 12 A at 100 °C case temperature and supports peak currents up to 38 A. The device exhibits a typical on-state resistance of 140 mΩ and maximum of 182 mΩ, alongside a total gate charge of 12 nC. Key dynamic parameters include turn-on delay of 6 ns, rise time of 7 ns, and fall time of 13 ns. It is qualified according to AEC Q101 standards for automotive reliability.

Single IGBTs Feature Summary

Highly robust 750 V technology with 100% avalanche testing
Best-in-class RDS(on) x Qfr performance for superior efficiency
Excellent RDS(on) x Qoss and RDS(on) x QG characteristics
Unique combination of low Crss/Ciss and high VGS(th)
Infineon proprietary die attach technology

Single IGBTs Applications

Uni- and bidirectional On Board Chargers
HV-LV DCDC converters
Hard switching half bridges
Soft switching topologies

Single IGBTs Procurement Notes

Verify the specific ordering suffix XTMA1 against the official datasheet to confirm the reel packaging configuration. Ensure that the source and driver source pins are not exchanged during assembly, as this may lead to malfunction. Confirm compliance with RoHS directives and check for any updates regarding cosmic radiation effects if applied blocking voltages exceed 525 V.

Single IGBTs Selection Notes

Select this component for applications requiring high thermal dissipation and robustness beyond 500 V bus voltages. Consider the 175 °C operating junction temperature range for harsh environments. Evaluate PCB layout to minimize stray inductances and coupling capacitances, as these significantly influence switching behavior. Consult application notes for optimal gate drive voltage windows.

Single IGBTs Part Context

This part belongs to the CoolSiC™ G1 family of 750 V silicon carbide MOSFETs from Infineon Technologies. It utilizes wide bandgap SiC material characteristics developed over more than 20 years. The device is designed for simplified and cost-effective deployment of highest system efficiency in automotive power electronics.