ALD110904PAL

FET, MOSFET Arrays Overview

The ALD110904PAL is a monolithic quad N-channel enhancement mode MOSFET array manufactured by Advanced Linear Devices using EPAD® CMOS technology. It features factory-matched transistors with a typical gate threshold voltage of +0.40V at IDS = 1µA and VDS = 0.1V. The device offers low input and output leakage currents, excellent temperature coefficient tracking, and high precision matching. Key electrical parameters include a drain-source breakdown voltage of 10V, continuous drain current of 12mA, and power dissipation of 500mW. It operates within a temperature range of 0°C to +70°C and is housed in an 8-pin Plastic DIP package.

FET, MOSFET Arrays Feature Summary

• Factory-monolithic matched pair configuration for exceptional electrical characteristic matching
• EPAD® CMOS technology enabling precise threshold voltage programming and control
• Ultra-low leakage currents suitable for nanowatt analog and digital circuits
• Excellent thermal tracking characteristics due to shared monolithic chip construction

FET, MOSFET Arrays Applications

• Precision current mirrors and nano-amp current sources
• Differential amplifier input stages and discrete voltage comparators
• High impedance resistor simulators and capacitive probe interfaces
• Sample and hold circuits and charge detectors/integrators
• Analog switches, multiplexers, and source followers

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'PAL' corresponds to the 8-pin Plastic DIP package when ordering. Confirm that the threshold voltage specification aligns with the +0.40V requirement for the intended application. Ensure static control procedures are followed during handling as the device is ESD sensitive. Check for availability of industrial temperature range options if operation outside the standard 0°C to +70°C range is required.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low voltage, small signal processing with high precision matching between channels. The +0.40V threshold voltage makes it suitable for sub-threshold biased circuits and ultra-low operating voltage designs below 0.40V. Consider the 500mW power dissipation limit and 12mA continuous drain current when designing load conditions. Verify compatibility with the 8-pin PDIP footprint against alternative packages like SOIC or SCL variants.

FET, MOSFET Arrays Part Context

This part belongs to the ALD1108xx/ALD1109xx family of EPAD® Precision Matched Pair MOSFET Arrays. The '1109' designation indicates an enhancement mode device with a specific threshold voltage, while '04' denotes the quad configuration. The 'PAL' suffix specifies the 8-pin Plastic DIP packaging option. These devices are designed for low voltage analog applications where matching and low leakage are critical.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the EPAD® technology characteristics and threshold voltage. Alternative packages such as ALD110904SAL (SOIC) offer identical electrical performance but different physical footprints. Cross-referencing with other manufacturers requires careful evaluation of threshold voltage tolerance and leakage current specifications.