ALD114804PCL

FET, MOSFET Arrays Overview

The ALD114804PCL is a quad N-channel depletion mode MOSFET array manufactured by Advanced Linear Devices using EPAD® CMOS technology. It features factory-matched pairs for precision applications. Key electrical parameters include a Drain-Source voltage of 10.6V, Gate-Source voltage of 10.6V, and Power dissipation of 500 mW. The typical Gate Threshold Voltage (VGS(th)) is -0.40V with a tolerance of ±0.02V. At VGS = +3.6V and VDS = +5V, the Drain-Source On Current is 12.0 mA. The Drain-Source On Resistance is 500 Ω at VGS = +3.6V and 5.4 kΩ at VGS = 0.0V. Input Capacitance is typically 2.5 pF, with turn-on and turn-off delay times of 10 ns each. Operating temperature range is 0°C to +70°C.

FET, MOSFET Arrays Feature Summary

• Monolithic quad N-channel depletion mode MOSFETs matched at the factory for exceptional electrical characteristics matching.
• Excellent temperature tracking characteristics due to devices being on the same monolithic chip.
• Suitable for low voltage, small signal applications with low input bias current and fast switching speed.
• Provides constant drain current in current source mode for higher voltage levels when gate is grounded.

FET, MOSFET Arrays Applications

• Functional replacement of Form B (normally closed) relays
• Ultra low power analog and digital circuits
• Current mirrors and current sources requiring high current gain
• Differential amplifier input stages and transmission gates

FET, MOSFET Arrays Procurement Notes

Verify the specific package type required, as the PCL suffix indicates a 16-pin Plastic DIP. Confirm RoHS compliance status via the manufacturer's documentation, as the datasheet notes that the 'L' suffix denotes lead-free. Ensure the operating environment stays within the specified 0°C to +70°C range. Check for ESD sensitivity precautions during handling and assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring precision matched pairs with low offset voltage and differential thermal response. Consider the -0.40V threshold voltage for depletion mode operation where the device conducts without applied gate voltage. Evaluate the 500 Ω on-resistance at VGS=+3.6V against circuit load requirements. Verify compatibility with single or dual supply systems ranging from 0.4V to 5V.

FET, MOSFET Arrays Part Context

The ALD114804PCL belongs to the ALD1148xx/ALD1149xx family of depletion mode EPAD MOSFET arrays. It is part of a broader series including ALD114804A and ALD114904 variants, which share similar technologies but may differ in pin counts or specific threshold tolerances. This family utilizes Electrically Programmable Analog Device technology for precise threshold control.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify functional equivalence regarding threshold voltage, matching accuracy, and package dimensions if considering alternative manufacturers.

FET, MOSFET Arrays FAQ

What is the typical Gate Threshold Voltage for the ALD114804PCL?

The typical Gate Threshold Voltage (VGS(th)) is -0.40V, with a minimum of -0.42V and a maximum of -0.38V at IDS = 1µA and VDS = 0.1V.

How does the ALD114804PCL behave when the gate is grounded?

When the gate is grounded, the device operates in resistance mode for low drain voltage levels and in current source mode for higher voltage levels, providing a constant drain current.

What is the maximum power dissipation rating?

The maximum power dissipation is 500 mW.