ALD212900SAL

FET, MOSFET Arrays Overview

The ALD212900SAL is a precision N-Channel EPAD MOSFET array featuring dual matched pairs in an 8-pin SOIC package. It utilizes Electrically Programmable Analog Device technology to achieve a Zero-Threshold gate voltage (VGS(th)) of 0.00V ±0.02V at IDS = 20µA and VDS = 0.1V. The device supports operation from +0.1V to +10V, with a typical offset voltage of 3.8mV and on-resistance of 14Ω at VGS = 5.0V. It offers high transconductance, low input capacitance (30pF), and a dynamic current range exceeding eight orders of magnitude, suitable for nanopower and low-voltage analog applications.

FET, MOSFET Arrays Feature Summary

• Zero-Threshold gate voltage enables circuit designs with input/output signals referenced to ground
• Precision matched pair characteristics with excellent temperature tracking on a single monolithic chip
• Sub-threshold operation capability for ultra-low power and nanopower applications
• High forward transconductance and output conductance at very low supply voltages

FET, MOSFET Arrays Applications

• Low overhead current mirrors and current sources
• Extremely low level voltage-clamps and zero-crossing detectors
• Nanopower discrete voltage comparators and charge integrators
• Energy harvesting circuits and backup battery power failure detectors
• Matched source followers, buffers, and sample-and-hold switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. The SAL suffix indicates an 8-pin Plastic SOIC package with lead-free (RoHS) compliance. Confirm that the operating temperature range meets the application requirements of 0°C to +70°C. Ensure static control procedures are observed during handling due to ESD sensitivity.

FET, MOSFET Arrays Selection Notes

Select this component when precise threshold matching and sub-threshold operation are required for low-voltage analog signal processing. The dual matched pair configuration simplifies differential amplifier and current mirror designs by minimizing offset voltage and thermal drift. Consider the 14Ω on-resistance and 50mA drive capability for switching loads within the specified voltage limits. Verify that the system supply voltage aligns with the device's optimal performance range for low noise and high gain.

FET, MOSFET Arrays Part Context

The ALD212900 belongs to the ALD2108xx/ALD2129xx/ALD2148xx/ALD2169xx EPAD MOSFET Array family. It is an enhanced version of the ALD110900 series, offering increased forward and output conductance. This family includes Zero-Threshold, enhancement mode, and depletion mode variants, all built using ALD’s proprietary EPAD CMOS technology for exceptional matching and temperature stability.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Designers should consult Advanced Linear Devices directly for potential cross-references or custom threshold voltage options.