ALD212908ASAL

FET, MOSFET Arrays Overview

The ALD212908ASAL is a precision enhancement mode N-Channel EPAD MOSFET array manufactured by Advanced Linear Devices. It features four monolithic devices with a gate threshold voltage (VGS(th)) of +0.80V ±0.01V at IDS = 20µA and VDS = 0.1V. The device offers an on-drain current of 79mA, a drain-source on resistance of 14Ω, and a breakdown voltage of 10V. Operating within a temperature range of 0°C to +70°C, it provides high transconductance and low input capacitance for low-power analog applications.

FET, MOSFET Arrays Feature Summary

• Precision matched pairs with offset voltage as low as 1mV
• Ultra-low subthreshold leakage currents for nanopower operation
• High forward transconductance and output conductance
• Excellent temperature tracking characteristics across the matched pair

FET, MOSFET Arrays Applications

• Low overhead current mirrors and current sources
• Zero power normally-on circuits
• Very low voltage analog and digital circuits
• High gain differential amplifier input stages
• Charge detectors and charge integrators

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and lead-free status. Ensure that the required operating temperature range aligns with the standard commercial grade specifications provided in the official documentation before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when precise matching between multiple MOSFET channels is critical for circuit performance. Consider the +0.80V threshold voltage requirement for gate drive levels. Evaluate the trade-off between the low input bias current and the required switching speed for the specific application environment.

FET, MOSFET Arrays Part Context

This part belongs to the ALD2129xx series of precision enhancement mode EPAD MOSFET arrays. It shares the same monolithic chip architecture as other members of the family but is distinguished by its specific +0.80V gate threshold voltage setting, enabling unique low-voltage biasing capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include the ALD212908APAL (Plastic DIP package) or the ALD212908ASAL variant if available. Verify pinout compatibility and ensure the replacement maintains the same precision matching characteristics and threshold voltage tolerance.