ALD310708APCL

FET, MOSFET Arrays Overview

The ALD310708APCL is a precision monolithic quad P-Channel MOSFET array manufactured using EPAD® CMOS technology. It features a factory-matched Gate Threshold Voltage (VGS(th)) of -0.80V ±0.02V, with a typical offset voltage of 2mV between devices on the same chip. The device operates in sub-threshold regions with ultra-low minimum operating currents below 1nA and supports supply voltages as low as 0.8V. Key electrical parameters include an input impedance of 2.5 x 10^10Ω, DC current gain exceeding 10^8, and an input capacitance of 2.5pF. It is housed in a 16-pin Plastic DIP package.

FET, MOSFET Arrays Feature Summary

• Precision matched Gate Threshold Voltages with tight lot-to-lot parametric control
• Ultra-low power operation with sub-threshold voltage capability and nano-power biasing
• Excellent temperature tracking characteristics due to monolithic construction
• High input impedance and low input/output leakage currents

FET, MOSFET Arrays Applications

• 0.5% precision current mirrors and current sources
• Very low voltage analog and digital circuits
• Backup battery circuits and power failure detectors
• Discrete differential amplifier input stages
• Precision capacitive probes and sensor interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'PCL' corresponds to the 16-pin Plastic DIP package and standard commercial temperature range (0°C to +70°C). Confirm RoHS compliance status for lead-free variants if required by your assembly process. Cross-reference the manufacturer's official ordering guide to ensure availability and correct pinout configuration before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select the ALD310708APCL when circuit designs require precise matching of P-Channel MOSFETs at very low operating voltages. This component is suitable for applications demanding minimal offset voltage and exponential current control in the sub-threshold region. Ensure the system voltage limits do not exceed the absolute maximum ratings of -8.0V for Drain-Source and Gate-Source voltages.

FET, MOSFET Arrays Part Context

This component belongs to the EPAD® Matched Pair MOSFET Family from Advanced Linear Devices, Inc. It serves as the P-Channel counterpart to the N-Channel ALD110808A/ALD110808 series, enabling complementary precision arrays. The device utilizes proprietary EPAD® CMOS technology to achieve exceptional matching of electrical characteristics and thermal tracking across multiple transistors on a single die.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should verify compatibility with existing N-Channel counterparts like the ALD1108xx series for complementary circuit implementations.