AM30P20-500P

$0.81

Description：MOSFET P-CH -200V 30A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:ad857dfecd8a Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH -200V 30A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
Rds On (Max) @ Id, Vgs：500mOhm @ 28A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 5.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1852 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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AM30P20-500P

Overview

The AM30P20-500P is a single P-channel MOSFET from Analog Power Inc. It features a maximum drain-source voltage (VDS) of -200V and a continuous drain current (ID) of 20A. The device has a typical on-resistance (RDS(on)) of 500mΩ at VGS = -10V. Key electrical parameters include a gate charge (QG) of 550nC, total power dissipation (PD) of 30W, and a thermal resistance junction-to-case of 28°C/W. It is housed in a TO-220 package.

Feature Summary

Single P-channel configuration for high-side switching applications
Robust 200V breakdown voltage capability
Designed for efficient power management with low on-resistance

Applications

DC-DC converter circuits
Motor control systems
Power supply load switches

Procurement Notes

Verify the specific datasheet revision and manufacturer lot codes upon receipt to ensure compliance with the stated electrical characteristics. Confirm that the TO-220 package dimensions match your PCB footprint requirements. Check for any lead-free or RoHS status updates if required by your manufacturing standards. Ensure proper thermal management solutions are integrated given the 30W power dissipation rating.

Selection Notes

Select this component when a 200V P-channel MOSFET is required with a 20A current capacity. The TO-220 package facilitates through-hole mounting and heatsink attachment. Consider the 500mΩ on-resistance for conduction loss calculations. Evaluate the 550nC gate charge against your driver capabilities to determine switching speed limitations.

Part Context

This part belongs to the Analog Power Inc. P-channel MOSFET lineup, specifically designed for medium-voltage power switching. The TO-220 packaging is standard for industrial and commercial power electronics where robust mechanical mounting and thermal performance are prioritized over miniaturization.