AM4362N

$0.45

Description：MOSFET N-CH 30V 19A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:a75b9be824b1 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 19A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19A
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2042 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W
Operating Temperature：-55°C ~ 150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AM4362N

Overview

The AM4362N is an N-Channel 30-V (D-S) MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage of 30 V and a continuous drain current of 19 A at 25°C, decreasing to 16 A at 70°C. The device utilizes low rDS(on) trench technology, offering a maximum on-resistance of 6 mΩ at VGS = 10V and 8 mΩ at VGS = 4.5V. It operates within a junction temperature range of -55 to 150 °C and is housed in an SO-8 package.

Feature Summary

Low rDS(on) trench technology
Low thermal impedance
Fast switching speed

Applications

DC/DC Conversion
Power Routing
Motor Drives

Procurement Notes

Verify the specific datasheet revision number DS_AM4362N_1B when sourcing components. Confirm that the supplier provides documentation matching the official Analog Power Inc. specifications. Ensure the received parts match the SO-8 package dimensions and electrical characteristics outlined in the manufacturer's preliminary data sheet before integration into final designs.

Selection Notes

Select this component for applications requiring a 30-V N-Channel MOSFET with high current handling capabilities up to 19 A. Consider the thermal resistance rating of 80 °C/W for heat dissipation planning. Evaluate the gate charge parameters against the driving circuit requirements to ensure efficient switching performance in power routing or motor drive systems.

Part Context

This part belongs to the Analog Power Inc. lineup of N-Channel MOSFETs designed for surface mount applications. It is engineered to provide low power loss through advanced trench processes. The SO-8 packaging facilitates compact board layouts while maintaining robust electrical performance for general-purpose power management tasks.