AM4400N

AM4400N

$0.51
  • Description:MOSFET N-CH 60V 5.1A SO-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:dfdfc8e1874e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 5.1A SO-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:82mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3.7 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:327 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AM4400N

Overview

The AM4400N is an N-Channel MOSFET manufactured by Analog Power Inc., designed for surface-mount applications in the 8-SO package. It features a drain-source voltage rating of 60 V and a continuous drain current of 5.1 A at ambient temperature, with a power dissipation capacity of 3.1 W. The device operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a low on-resistance (rDS(on)) of 36 mΩ at VGS = 10V and 43 mΩ at VGS = 4.5V, ensuring minimal power loss and high efficiency in power management circuitry.

Feature Summary

  • Low rDS(on) trench technology ensures minimal power loss and energy conservation.
  • Fast switching speed suitable for high-frequency power conversion applications.
  • Low thermal impedance facilitates efficient heat dissipation in compact designs.

Applications

  • PWM DC-DC converters
  • Power management circuitry
  • White LED boost converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact pinout, tape-and-reel specifications, and environmental compliance status. Ensure the component matches the required 8-SO package dimensions and thermal characteristics for your PCB layout. Cross-reference the part number with the latest datasheet revision to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a 60 V N-Channel MOSFET with moderate current handling capabilities up to 5.1 A. The 8-SO surface-mount package is suitable for space-constrained designs. Consider the thermal performance and rDS(on) values relative to the expected operating temperature and gate drive voltage levels to ensure optimal efficiency and reliability in the target circuit design.

Part Context

The AM4400N belongs to the Analog Power Inc. family of single FETs and MOSFETs. It is engineered as a general-purpose power switch utilizing trench technology to achieve low on-resistance. This component is positioned for use in various electronic systems where efficient power conversion and compact form factors are prioritized, serving as a reliable solution for modern power management requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with potential replacements by matching critical parameters such as VDS, ID, rDS(on), package type, and thermal ratings against the original specification sheet.

FAQ

What is the maximum drain-source voltage rating for the AM4400N?

The maximum drain-source voltage (VDS) rating for the AM4400N is 60 V.

What is the typical on-resistance value at a gate-source voltage of 10V?

The typical on-resistance (rDS(on)) at VGS = 10V is 36 mΩ.

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