AM4417P-CT

$0.61

Description：MOSFET P-CH -60V 11.1A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Strip

SKU:863c0841820e Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH -60V 11.1A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Strip
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9258 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOIC-8
Package / Case：SOIC-8

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AM4417P-CT

Overview

The Analog Power AM4417P is a P-Channel MOSFET with a Drain-Source Voltage (VDS) of -60 V and a Gate-Source Voltage (VGS) rating of ±20 V. It features a continuous drain current (ID) of -11.1 A at 25°C, reducing to -9.3 A at 70°C, and a pulsed drain current (IDM) of -50 A. The on-state resistance (rDS(on)) is typically 17 mΩ at VGS = -10 V and 23 mΩ at VGS = -4.5 V. Maximum power dissipation is 40 W at 25°C, with a junction-to-ambient thermal resistance (RθJA) of 80 °C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Provides fast switching speed suitable for high-frequency applications.
Features low thermal impedance for effective heat management.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision (e.g., DS_AM4417P_1A) against your design requirements. Confirm that the package dimensions and pinout match your PCB footprint exactly. Ensure the absolute maximum ratings, particularly regarding pulsed drain current and thermal limits, are not exceeded in your operational environment. Validate all electrical parameters under your specific circuit conditions before finalizing procurement.

Selection Notes

Select this component when a P-Channel MOSFET with a 60 V breakdown voltage is required. It is appropriate for applications needing a continuous current around 11 A at room temperature. Consider its 17 mΩ on-resistance for efficiency targets. Verify compatibility with standard gate drive voltages of -10 V or -4.5 V based on your system logic levels.

Part Context

This device belongs to the Analog Power discrete semiconductor portfolio, specifically within their P-Channel MOSFET line. It is designed as a surface-mount component intended for integration into compact electronic circuits where space efficiency and thermal performance are critical factors for overall system reliability.