AM4842N

$0.51

Description：MOSFET N-CH 40V 13.8A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:be88895cbe53 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 13.8A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：13.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：737 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Download product information

AM4842N

Overview

The Analog Power AM4842N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 40 V and a Gate-Source Voltage (VGS) rating of ±20 V. It features a maximum continuous drain current (ID) of 13.8 A at 25°C, reducing to 11.6 A at 70°C. The on-state resistance (rDS(on)) is 11 mΩ at VGS = 10 V and 14 mΩ at VGS = 4.5 V. The device supports a pulsed drain current (IDM) of 50 A and has a maximum junction temperature range from -55°C to 150°C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Designed with low thermal impedance for effective heat dissipation.
Capable of fast switching speeds suitable for high-frequency applications.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision number DS_AM4842N_1A against your procurement requirements. Confirm that the component meets all necessary safety standards for its intended application environment. Ensure compatibility with existing circuit designs regarding voltage ratings and thermal management constraints before finalizing orders.

Selection Notes

Select this component when a 40 V N-Channel MOSFET is required for power management tasks. Consider the 11 mΩ rDS(on) at 10 V gate drive for standard logic-level control or the 14 mΩ value at 4.5 V if driving from lower voltage sources. Evaluate the thermal resistance and package type to ensure adequate heat sinking for the expected load currents in the target system design.

Part Context

This component belongs to the Analog Power discrete semiconductor portfolio, specifically within their N-Channel MOSFET line. It is designed for general-purpose power switching applications requiring moderate voltage handling and efficient current flow. The device is manufactured using silicon-based trench technology to optimize performance characteristics for modern electronic systems.

Replacement Considerations

Consult official Analog Power documentation for verified substitute part numbers. Cross-reference electrical parameters such as VDS, ID, and rDS(on) to ensure functional equivalence in the target circuit design without compromising system reliability.