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Product Detailed Parameters
- Description：MOSFET N-CH 100V 43A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4376 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM50N10-18D is an N-channel MOSFET from Analog Power Inc., housed in a TO-252 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 43 A at case temperature. The device utilizes low RDS(on) trench technology, with a maximum on-resistance of 18 mΩ. Thermal performance includes a power dissipation rating of 50 W at case temperature and a junction temperature range up to 175 °C. Gate-source threshold voltage is specified between 1 V and 4 V.
Feature Summary
- Utilizes low RDS(on) trench technology for efficient conduction
- Designed for high-speed switching applications
- Surface-mount construction for automated assembly
Applications
- DC-DC converters
- Power management circuits
- Motor control systems
Procurement Notes
Verify the manufacturer part number against official Analog Power Inc. documentation to ensure authenticity. Confirm that the TO-252 package dimensions and pinout match design requirements. Check for specific ordering suffixes if available in official catalogs. Ensure compliance with RoHS directives as stated in the product datasheet. Validate thermal characteristics against system heat dissipation needs.
Selection Notes
Select this component when a 100 V N-channel MOSFET with moderate current handling is required. The TO-252 package offers a balance between thermal performance and PCB space efficiency. Consider the 18 mΩ on-resistance for conduction loss calculations. Evaluate the 43 A current rating against peak load requirements. Ensure gate drive voltages align with the 1 V to 4 V threshold specification.
Part Context
This device belongs to the AM50N series of single N-channel MOSFETs produced by Analog Power Inc. The company specializes in power management solutions, offering various packages including DFN and SO types. The AM50N10-18D specifically targets applications requiring robust switching performance in a compact surface-mount form factor.
Replacement Considerations
Consult official Analog Power Inc. substitution guides for verified alternatives. Cross-reference key parameters such as VDS, ID, and RDS(on) when evaluating potential replacements. Verify package compatibility before implementation.
