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The AM7102NA is an N-Channel MOSFET featuring a 100-V drain-source voltage and a 9.5-A continuous drain current at 25°C. It utilizes low on-resistance trench technology, providing a maximum rDS(on) of 36 mΩ at VGS = 4.5V and 26 mΩ at VGS = 10V. The device operates within a junction temperature range of -55 to 150°C and offers a thermal resistance (RθJA) of 81°C/W in a DFN3x3-8L package.
Verify the specific ordering suffix against official Analog Power documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required environmental standards for your intended deployment environment before finalizing procurement plans.
Select this component based on its 100-V rating and low on-resistance characteristics suitable for high-efficiency switching applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance and verify thermal management requirements given the package constraints.
This part belongs to the Analog Power N-Channel MOSFET family, designed for general-purpose switching applications. It is engineered to provide robust performance in compact form factors, supporting modern electronic designs that require efficient power management and reliable operation under varying thermal conditions.
Consult official Analog Power documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' components without validating pinout, electrical parameters, and thermal characteristics against the original datasheet.
The maximum pulsed drain current (IDM) is 40 A.
The operating junction and storage temperature range is from -55 to 150 °C.