AM7411P

$1.38

Description：MOSFET P-CH -100V 33A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:2232161d1591 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH -100V 33A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：95mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3665 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5.2x5.55)
Package / Case：8-PowerVDFN

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AM7411P

Overview

The AM7411P is a P-Channel MOSFET manufactured by Analog Power Inc., designed for surface-mount applications. It features an 8-DFN (5.2x5.55) package and supports a drain-source voltage of -100V. The device handles a continuous drain current of -33A at case temperature of 70°C and -6A at ambient temperature of 25°C. Power dissipation ratings are 156W at TC=70°C and 5W at TA=25°C. The gate-source voltage limit is ±20V.

Feature Summary

P-Channel enhancement mode construction
Surface-mount DFN packaging for compact designs
High current handling capability with thermal optimization

Applications

Power switching circuits
Load management systems
DC-DC converter topologies

Procurement Notes

Verify the manufacturer designation carefully, as Analog Power Inc. is distinct from Analog Devices. Confirm the specific package dimensions and thermal characteristics against the official datasheet before integration. Ensure compatibility with the intended voltage and current requirements for the target application.

Selection Notes

Select this component when a P-Channel MOSFET with -100V rating and high current capacity in a small footprint is required. Consider the thermal resistance and power dissipation limits relative to the operating environment. Verify that the gate drive voltage remains within the ±20V specification for reliable operation.

Part Context

This component belongs to the category of single FETs and MOSFETs. It serves as a discrete semiconductor switch for power electronics applications requiring robust performance in a compact surface-mount form factor.