AM90N08-10B-CT

$1.02

Description：MOSFET N-CH 80V 90A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:0dfdbbd1708f Category: Single FETs, MOSFETs Brand: Analog Power Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 90A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 44A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5052 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：-

Download product information

AM90N08-10B-CT

Overview

The AM90N08-10B is an N-channel enhancement mode MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) of 80 V and a gate-source voltage (VGS) rating of ±20 V. The device supports a continuous drain current (ID) of 90 A at TC=25°C, with a pulsed drain current (IDM) of 390 A. On-state resistance (rDS(on)) is specified as 11 mΩ at VGS = 10 V and 13 mΩ at VGS = 4.5 V. Total gate charge (Qg) is typically 60 nC. Thermal ratings include a maximum junction temperature of 150°C and a junction-to-case thermal resistance (RθJC) of 1°C/W.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Features low thermal impedance to support high power dissipation.
Designed for fast switching speed in dynamic applications.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the requested package matches the physical dimensions provided in the datasheet. Ensure the component meets RoHS requirements if applicable to your manufacturing process. Validate all electrical parameters against the customer's specific application conditions prior to finalizing orders.

Selection Notes

Select this component based on its 80 V drain-source voltage capability and 90 A continuous current rating. Consider the 11 mΩ on-resistance at 10 V gate drive for efficiency optimization. Evaluate the 60 nC total gate charge for switching frequency requirements. Assess the thermal management needs relative to the 1°C/W junction-to-case resistance.

Part Context

This part belongs to the Analog Power N-channel MOSFET family designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching characteristics. The device is intended for use in environments requiring robust performance under high current loads.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications when considering alternative components from other manufacturers.