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Product Detailed Parameters
- Description：MOSFET N-CH 100V 90A TO-220
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4221 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The AM90N10-14P is an N-Channel MOSFET manufactured by Analog Power Inc. It features a 100-V drain-source voltage rating and supports a continuous drain current of 90A at ambient temperature. The device is designed for through-hole mounting in a TO-220 package, offering a total power dissipation capacity of 300W under standard thermal conditions. Key electrical characteristics include a gate-source threshold voltage of 1V at 250 uA and a gate-body leakage current of ±100 nA at specified bias conditions.
Feature Summary
- Utilizes advanced trench technology for optimized performance
- Designed for high-current switching applications with low on-resistance characteristics
Applications
- Power supply circuits requiring robust N-channel switching
- Motor control systems utilizing through-hole mounted transistors
- General-purpose power management modules
Procurement Notes
Verify the specific datasheet version from Analog Power Inc. to confirm exact thermal resistance values and pinout configurations before integration. Ensure that the TO-220 package compatibility matches your PCB footprint requirements. Cross-reference the 90A current rating with your system's thermal management capabilities to prevent overheating during operation.
Selection Notes
Select this component when a 100V N-Channel MOSFET with high current handling capability is required for through-hole assembly. Consider the 300W power dissipation limit relative to your heatsinking strategy. Verify that the gate threshold voltage aligns with your driver circuit logic levels for reliable switching performance.
Part Context
This part belongs to the Analog Power N-Channel MOSFET series, specifically utilizing trench technology for improved efficiency. It serves as a discrete power semiconductor solution for medium-voltage applications. The TO-220 package provides mechanical stability and thermal conductivity suitable for industrial and consumer electronics power stages.
Replacement Considerations
Consult official Analog Power documentation for direct equivalents. Ensure any substitute maintains the 100V rating, 90A current capacity, and TO-220 package form factor to guarantee mechanical and electrical compatibility without redesigning the host circuit board.
