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Product Detailed Parameters
- Description：MOSFET N-CH 200V 29A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Strip
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：140mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 5.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1482 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AM90N20-140B is an N-channel enhancement mode MOSFET manufactured by Analog Power Inc. It features a 200V drain-source voltage rating and supports a continuous drain current of 29A at case temperature. The device is housed in a surface-mount TO-263 package, offering a power dissipation capacity of 300W under thermal case conditions. Key electrical characteristics include a gate-source threshold voltage of 1V and a gate-body leakage current of ±100nA.
Feature Summary
- N-channel silicon construction for power switching applications
- Surface-mount TO-263 packaging for efficient thermal management
- Enhancement mode operation with defined gate threshold specifications
Applications
- Power management circuits
- High-side switching regulation
- Inrush limiting for bus voltages
Procurement Notes
Verify the specific datasheet version from Analog Power Inc. to confirm exact RDS(on) values and thermal resistance parameters, as these are critical for circuit design. Ensure the TO-263 footprint matches your PCB layout requirements. Cross-reference with official distributor catalogs for accurate part identification and availability status before procurement.
Selection Notes
Select this component for applications requiring 200V blocking capability and moderate current handling up to 29A. The TO-263 package is suitable for designs needing surface-mount integration with adequate heatsinking. Consider the 1V threshold voltage for logic-level drive compatibility. Evaluate thermal performance based on the 300W (Tc) rating in your specific enclosure environment.
Part Context
This device belongs to the AM90N series of single N-channel MOSFETs from Analog Power Inc., which also includes variants like the AM90N20-78B and AM90N20-40D. These components share similar voltage ratings but differ in on-resistance and package types such as TO-252 or D2Pak. The series targets general power management and switching applications within the company's portfolio.
Replacement Considerations
Direct substitutes may include other 200V N-channel MOSFETs in TO-263 packages with comparable current ratings. Verify pinout compatibility and thermal characteristics when replacing. No specific alternative part numbers are confirmed in public documentation for direct substitution.
