AMC3M0040120D

$23.72

Description：SICFET N-CH 1200V 15A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:b94210f9134e Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 15A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 20V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 20V
Vgs(th) (Max) @ Id：2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 7 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3396 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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AMC3M0040120D

Overview

The AMC3M0040120D is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by Analog Power Inc. It features a 1200 V drain-source voltage rating and is available in descriptions citing either 15 A or 20 A continuous current at case temperature, with a 500 W power dissipation capability. The device utilizes a TO-247 through-hole package. Key electrical parameters include a gate-source threshold voltage of approximately 2 V and a maximum gate-body leakage of ±100 nA.

Feature Summary

Constructed using Silicon Carbide (SiC) technology for enhanced thermal performance
N-Channel Enhancement Mode operation
Designed for high-voltage applications up to 1200 V

Applications

High-frequency power switching circuits
Industrial motor drives
DC-DC converters

Procurement Notes

Verify the specific current rating (15 A vs. 20 A) required for your design, as documentation varies. Confirm the manufacturer is Analog Power Inc., distinct from other entities using similar part numbers like C3M0040120D. Ensure the TO-247 package fits your PCB layout constraints before ordering.

Selection Notes

Select this component for applications requiring high breakdown voltage and efficient thermal management. SiC technology offers superior performance over silicon in high-temperature environments. Consider the specific current derating curves provided in the official datasheet to ensure reliable operation under your expected load conditions.

Part Context

This part belongs to the family of Silicon Carbide power switches offered by Analog Power Inc. These devices are engineered to replace traditional silicon MOSFETs in demanding power electronics applications where efficiency and heat dissipation are critical factors.