AMR452N-CT

$0.48

Description：MOSFET N-CH 100V 20A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:8b1788e46757 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 20A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：404 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：23W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5x6
Package / Case：DFN5x6

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AMR452N-CT

Overview

The AMR452N is an N-Channel 100-V (D-S) MOSFET manufactured by Analog Power Inc. It features a DFN5X6-8L package with a maximum Drain-Source Voltage of 100 V and Gate-Source Voltage of ±20 V. The device supports a continuous drain current of 20 A at 25°C case temperature and 9.4 A at 25°C ambient temperature, with a pulsed drain current capability of 30 A. On-state resistance is specified as 38 mΩ at VGS = 10V and 50 mΩ at VGS = 4.5V. Thermal ratings include a junction-to-case resistance of 6 °C/W and a junction-to-ambient resistance of 65 °C/W. Operating junction and storage temperatures range from -55 to 150 °C.

Feature Summary

Utilizes low on-resistance trench technology for efficient conduction.
Designed with low thermal impedance for effective heat dissipation.
Engineered for fast switching speed in power applications.

Applications

LED Inverter Circuits
DC/DC Conversion Circuits
Motor drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required environmental standards and qualification levels for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component based on its 100-V rating and low on-resistance characteristics suitable for high-efficiency switching. Evaluate thermal management requirements using the provided junction-to-ambient resistance data. Ensure gate drive voltage aligns with the specified thresholds for optimal performance and minimal conduction losses.

Part Context

This part belongs to the Analog Power N-Channel MOSFET series designed for general-purpose power switching. It utilizes a DFN5X6-8L surface-mount package to provide compact integration into modern electronic designs while maintaining robust electrical performance under varying load conditions.

Replacement Considerations

Cross-reference pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet or exceed the 100-V breakdown voltage and current handling capabilities documented for this specific model.