AO3400A

$0.39

Description：30V 5.8A 35MR@10V,5.8A 1.4W 1.4V
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76e19d5bfa2c Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：30V 5.8A 35MR@10V,5.8A 1.4W 1.4V
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1050 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3400A

Overview

The UMW AO3400A is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a drain-source breakdown voltage (VDS) of 30V and a continuous drain current (ID) of 5.8A at VGS = 10V. The device exhibits low on-resistance, specified as 28mΩ at VGS = 10V, 33mΩ at VGS = 4.5V, and 52mΩ at VGS = 2.5V. Gate threshold voltage ranges from 0.7V to 1.4V. Total gate charge is typically 9.7nC at VGS = 4.5V. Power dissipation is rated at 1.4W at 25°C ambient temperature. Operating junction and storage temperatures span from -55°C to +150°C.

Feature Summary

Utilizes advanced trench technology for enhanced performance
Provides low on-resistance across various gate drive voltages
Capable of operation with low gate-source voltage thresholds

Applications

Load switching circuits
PWM motor control applications
Power management modules

Procurement Notes

Verify the manufacturer designation matches UMW when sourcing this component. Confirm the package type is SOT-23 and the marking code corresponds to the specific revision. Ensure the datasheet parameters align with your circuit requirements before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with moderate current handling capabilities. Consider the thermal resistance values and power dissipation limits relative to your expected operating conditions. Verify that the gate drive voltage provided by your controller falls within the effective range for the desired on-resistance.

Part Context

This part belongs to the AO3400 series of N-channel MOSFETs manufactured by UMW. It is designed for general-purpose switching applications where space efficiency is critical. The SOT-23 package allows for high-density PCB layouts while maintaining reliable electrical performance under standard operating conditions.